| PART |
Description |
Maker |
| YTF541 |
27 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
|
| IRFP250A |
32 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| ASJD1200R085SY-EX/S ASJD1200R085Y-EL |
52 A, 1200 V, 0.085 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA
|
MICROSS COMPONENTS
|
| BUZ71 |
N-CHANNEL 50V - 0.085 OHM - 17A TO-220 STRIPFET POWER MOSFET
|
ST Microelectronics
|
| BUZ21-E3046 BUZ21-E3044 BUZ21-E3045 |
21 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
21 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 4 PIN
|
SIEMENS AG
Infineon Technologies AG
|
| PSMN085-150K PSMN085-150K/T3 |
N-channel TrenchMOS SiliconMAX standard level FET
3.5 A, 150 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA PLASTIC, SO-8
|
NXP Semiconductors N.V.
|
| STI35N65M5 STP35N65M5 STB35N65M5 STW35N65M5 STF35N |
N-channel 650 V, 0.085 Ohm, 27 A, MDmesh(TM) V Power MOSFET in I2PAK
N-channel 650 V, 0.085 Ω, 27 A, MDmesh?/a> V Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220, TO-247
N-channel 650 V, 0.085 Ω, 27 A, MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220, TO-247
|
ST Microelectronics
STMicroelectronics
|
| MUX08FQ |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected) SGL ENDED MULTIPLEXER, CDIP16
|
Analog Devices, Inc.
|
| APT50M85LVR APT50M85B2VR |
POWER MOS V 500V 56A 0.085 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT30M85 APT30M85BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 300V 40A 0.085 Ohm
|
Advanced Power Technology, Ltd.
|
| OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展|5A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 21A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五（巴西）国际消费电子展|9A一（c）|园区
|
Electronic Theatre Controls, Inc.
OKI SEMICONDUCTOR CO., LTD.
|
| NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143
From old datasheet system
|
NEC Electron Devices
|
|
